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arXiv · 2011.13106

A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity

Zexin Feng·Peixin Qin·Yali Yang·Han Yan·Huixin Guo·Xiaoning Wang·Xiaorong Zhou·Yuyan Han·Jiabao Yi·Dongchen Qi·Xiaojiang Yu·Mark B. H. Breese·Xin Zhang·Haojiang Wu·Hongyu Chen·Hongjun Xiangb·Chengbao Jiang·Zhiqi Liu
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Abstract

The coupling of optical and electronic degrees of freedom together with quantum confinement in low-dimensional electron systems is particularly interesting for achieving exotic functionalities in strongly correlated oxide electronics. Recently, high room-temperature mobility has been achieved for a large bandgap transparent oxide - BaSnO$_3$ upon extrinsic La or Sb doping, which has excited significant research attention. In this work, we report the observation of room-temperature ferromagnetism in BaSnO$_3$ thin films and the realization of a two-dimensional electron gas (2DEG) on the surface of transparent BaSnO$_3$ via oxygen vacancy creation, which exhibits a high carrier density of $\sim 7.72*10^{14} /{\rm cm}^2$ and a high room-temperature mobility of ~18 cm$^2$/V/s. Such a 2DEG is rather sensitive to strain and a less than 0.1% in-plane biaxial compressive strain leads to a giant resistance enhancement of 350% (more than 540 kOhm/Square) at room temperature. Thus, this work creates a new path to exploring the physics of low-dimensional oxide electronics and devices applicable at room temperature.

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Zexin Feng, Peixin Qin, Yali Yang, Han Yan, Huixin Guo, Xiaoning Wang, Xiaorong Zhou, Yuyan Han, Jiabao Yi, Dongchen Qi, Xiaojiang Yu, Mark B. H. Breese, Xin Zhang, Haojiang Wu, Hongyu Chen, Hongjun Xiangb, Chengbao Jiang, Zhiqi Liu. 2020-11-26. A two-dimensional electron gas based on a 5s oxide with high room-temperature mobility and strain sensitivity. https://doi.org/10.1016/j.actamat.2020.116516

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