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arXiv · 2010.13414

Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering

Valerie Brien·P. Miska·H. Rinnert·D. Genève·P. Pigeat
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Abstract

Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $μ$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concentration rate. This study first presents how Energy-Dispersive Spectroscopy of X-rays (EDSX) Er Cliff Lorimer sensitivity factor alpha = 5 is obtained by combining EDSX and electron probe micro analysis (EPMA) results on reference samples. It secondly presents the relative PL intensities of nanocrystallized samples prepared with identical sputtering parameters as a function of the Er concentration. The structure of crystallites in AlN films is observed by transmission electron microscopy.

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Valerie Brien, P. Miska, H. Rinnert, D. Genève, P. Pigeat. 2020-10-26. Structural, chemical and optical characterizations of nanocrystallized AlN:Er thin films prepared by r.f. magnetron sputtering. https://doi.org/10.1016/j.mseb.2007.07.018

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