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arXiv · 2010.12943

Comparison of coherent phonon generation by electronic and ionic Raman scattering in LaAlO$_3$

Martin J. Neugebauer·Dominik M. Juraschek·Matteo Savoini·Pascal Engeler·Larissa Boie·Elsa Abreu·Nicola A. Spaldin·Steven L. Johnson
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Abstract

In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years been associated with a variety of emergent lattice-driven phenomena in complex transition-metal oxides, but the underlying mechanism is often obscured by the presence of multiple coupled order parameters in play. Here, we use time-resolved spectroscopy to compare coherent phonons generated by ionic Raman scattering with those created by more conventional electronic Raman scattering on the nonmagnetic and non-strongly-correlated wide band-gap insulator LaAlO$_3$. We find that the oscillatory amplitude of the low-frequency Raman-active $E_g$ mode exhibits a sharp peak when we tune our pump frequency into resonance with the high-frequency infrared-active $E_u$ mode, consistent with first-principles calculations. Our results suggest that ionic Raman scattering can strongly dominate electronic Raman scattering in wide band-gap insulating materials. We also see evidence of competing scattering channels at fluences above 28~mJ/cm$^2$ that alter the measured amplitude of the coherent phonon response.

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Martin J. Neugebauer, Dominik M. Juraschek, Matteo Savoini, Pascal Engeler, Larissa Boie, Elsa Abreu, Nicola A. Spaldin, Steven L. Johnson. 2020-10-24. Comparison of coherent phonon generation by electronic and ionic Raman scattering in LaAlO$_3$. https://doi.org/10.1103/physrevresearch.3.013126

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