Trends in the valence band electronic structures of mixed uranium oxides

Kristina O Kvashnina; Piotr M Kowalski; Sergei M Butorin; Gregory Leinders; Janne Pakarinen; René Bès; Haijian Li; Marc Verwerft

doi:10.1039/c8cc05464a

arXiv · 2010.08301

Trends in the valence band electronic structures of mixed uranium oxides

Kristina O Kvashnina·Piotr M Kowalski·Sergei M Butorin·Gregory Leinders·Janne Pakarinen·René Bès·Haijian Li·Marc Verwerft

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Abstract

Valence band electronic structure of mixed uranium oxides (UO2, U4O9, U3O7, U3O8, UO3) has been studied by the resonant inelastic X-ray scattering (RIXS) technique at the U M5 edge and by computational methods. We show here that the RIXS technique and recorded U 5f-O 2p charge transfer excitations can be used to proof the validity of theoretical approximations

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Kristina O Kvashnina, Piotr M Kowalski, Sergei M Butorin, Gregory Leinders, Janne Pakarinen, René Bès, Haijian Li, Marc Verwerft. 2020-10-16. Trends in the valence band electronic structures of mixed uranium oxides. https://doi.org/10.1039/c8cc05464a

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