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arXiv · 2009.05626

Analysis of a new implicit solver for a semiconductor model

Victor P. DeCaria·Cory D. Hauck·M. Paul Laiu
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Abstract

We present and analyze a new iterative solver for implicit discretizations of a simplified Boltzmann-Poisson system. The algorithm builds on recent work that incorporated a sweeping algorithm for the Vlasov-Poisson equations as part of nested inner-outer iterative solvers for the Boltzmann-Poisson equations. The new method eliminates the need for nesting and requires only one transport sweep per iteration. It arises as a new fixed-point formulation of the discretized system which we prove to be contractive for a given electric potential. We also derive an accelerator to improve the convergence rate for systems in the drift-diffusion regime. We numerically compare the efficiency of the new solver, with and without acceleration, with a recently developed nested iterative solver.

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Victor P. DeCaria, Cory D. Hauck, M. Paul Laiu. 2020-09-11. Analysis of a new implicit solver for a semiconductor model. https://arxiv.org/abs/2009.05626

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