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arXiv · 2009.01479

Enhancing single photon emission through quasi-bound states in the continuum of monolithic hexagonal boron nitride metasurface

Shun Cao·Yi Jin·Hongguang Dong·Tingbiao Guo·Jinlong He·Sailing He
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Abstract

A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3*10^4) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.

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Shun Cao, Yi Jin, Hongguang Dong, Tingbiao Guo, Jinlong He, Sailing He. 2020-09-03. Enhancing single photon emission through quasi-bound states in the continuum of monolithic hexagonal boron nitride metasurface. https://arxiv.org/abs/2009.01479

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