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arXiv · 2009.01198

Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates

M. A. Mastro·R. T. Holm·N. D. Bassim·C. R. Eddy, Jr.·R. L. Henry·M. E. Twigg·A. Rosenberg
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Abstract

Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented the growth of a two-domain GaN surface as well as cubic GaN inclusions. A crack-free 600 nm GaN cap / 5x AlN / GaN DBR structure on Si (100) was demonstrated. This accomplishment of a wurtzite III-nitride DBRs on Si (100) opens the possibility to integrate novel optical and optoelectronic devices with established Si microelectronics technology.

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M. A. Mastro, R. T. Holm, N. D. Bassim, C. R. Eddy, Jr., R. L. Henry, M. E. Twigg, A. Rosenberg. 2020-09-02. Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates. https://doi.org/10.1143/jjap.45.l814

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