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arXiv · 2009.01117

Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices

M. A. Mastro·J. K. Hite·C. R. Eddy, Jr.·M. J. Tadjer·S. J. Pearton·F. Ren·J. Kim
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Abstract

Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.

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M. A. Mastro, J. K. Hite, C. R. Eddy, Jr., M. J. Tadjer, S. J. Pearton, F. Ren, J. Kim. 2020-09-02. Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices. https://doi.org/10.1142/s012915641940007x

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