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arXiv · 2008.09425

Engineering telecom single-photon emitters in silicon for scalable quantum photonics

M. Hollenbach·Y. Berencén·U. Kentsch·M. Helm·G. V. Astakhov
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Abstract

We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.

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M. Hollenbach, Y. Berencén, U. Kentsch, M. Helm, G. V. Astakhov. 2020-08-21. Engineering telecom single-photon emitters in silicon for scalable quantum photonics. https://doi.org/10.1364/oe.397377

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