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arXiv · 2008.06819

Dynamic Tilting of Ferroelectric Domain Walls via Optically Induced Electronic Screening

Youngjun Ahn·Arnoud S. Everhardt·Hyeon Jun Lee·Joonkyu Park·Anastasios Pateras·Silvia Damerio·Tao Zhou·Anthony D. DiChiara·Haidan Wen·Beatriz Noheda·Paul G. Evans
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Abstract

Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical pulse changes the tilt angle that 90{\deg} a/c domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved synchrotron x-ray scattering studies of the domain diffuse scattering. Tilting occurs at 298 K, a temperature at which the a/b and a/c domain phases coexist but is absent at 343 K in the better ordered single-phase a/c regime. Phase coexistence at 298 K leads to increased domain-wall charge density, and thus a larger screening effect than in the single-phase regime. The screening mechanism points to new directions for the manipulation of nanoscale ferroelectricity.

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Youngjun Ahn, Arnoud S. Everhardt, Hyeon Jun Lee, Joonkyu Park, Anastasios Pateras, Silvia Damerio, Tao Zhou, Anthony D. DiChiara, Haidan Wen, Beatriz Noheda, Paul G. Evans. 2020-08-16. Dynamic Tilting of Ferroelectric Domain Walls via Optically Induced Electronic Screening. https://doi.org/10.1103/physrevlett.127.097402

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