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arXiv · 2008.06188

High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP

Yoshihiko Okamoto·Kazushige Saigusa·Taichi Wada·Youichi Yamakawa·Ai Yamakage·Takao Sasagawa·Naoyuki Katayama·Hiroshi Takatsu·Hiroshi Kageyama·Koshi Takenaka
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Abstract

We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.

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Yoshihiko Okamoto, Kazushige Saigusa, Taichi Wada, Youichi Yamakawa, Ai Yamakage, Takao Sasagawa, Naoyuki Katayama, Hiroshi Takatsu, Hiroshi Kageyama, Koshi Takenaka. 2020-08-14. High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP. https://doi.org/10.1103/physrevb.102.115101

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