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arXiv · 2006.11797

Strong localization in a suspended monolayer graphene by intervalley scattering

Cenk Yanik·Vahid Sazgari·Abdulkadir Canatar·Yaser Vaheb·Ismet I. Kaya
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Abstract

A gate induced insulating behavior at zero magnetic field is observed in a high mobility suspended monolayer graphene near the charge neutrality point. The graphene device initially cleaned by a current annealing technique was undergone a thermo-pressure cycle to allow short range impurities to be adsorbed directly on the ultra clean graphene surface. The adsorption process generated a strong temperature and electric field dependent behavior on the conductance of the graphene device. The conductance around the neutrality point is observed to be reduced from around $e^2/h$ at 30 K to $\sim0.01~e^2/h$ at 20 mK. A direct transition from insulator to quantum Hall conductor within $\approx0.4~T$ accompanied by broken-symmetry-induced $ν=0,\pm1$ plateaux confirms the presence of intervalley scatterers.

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Cenk Yanik, Vahid Sazgari, Abdulkadir Canatar, Yaser Vaheb, Ismet I. Kaya. 2021-02-13. Strong localization in a suspended monolayer graphene by intervalley scattering. https://doi.org/10.1103/physrevb.103.085437

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