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arXiv · 2006.06660

Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2

Felix Carrascoso·Hao Li·Riccardo Frisenda·Andres Castellanos-Gomez
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Abstract

Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS2, MoSe2, WS2 and WSe2. In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy. We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. Finally, we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS2 flakes.

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Felix Carrascoso, Hao Li, Riccardo Frisenda, Andres Castellanos-Gomez. 2020-06-11. Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2. https://doi.org/10.1007/s12274-020-2918-2

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