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arXiv · 2005.10699

Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

Noah Mendelson·Luis Morales·Chi Li·Ritika Ritika·Minh Anh Phan Nguyen·Jacqueline Loyola-Echeverria·Sejeong Kim·Stephan Gotzinger·Milos Toth·Igor Aharonovich
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Abstract

Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate. Combining a range of characterization techniques, we demonstrate that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. We further utilize these emitters and integrate them with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ~2.9 x106 cps and an average photon purity of ~90%. Our results advance the controlled generation of spatially distributed quantum emitters in hBN and demonstrate a key step towards on-chip devices with maximum collection efficiency.

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Noah Mendelson, Luis Morales, Chi Li, Ritika Ritika, Minh Anh Phan Nguyen, Jacqueline Loyola-Echeverria, Sejeong Kim, Stephan Gotzinger, Milos Toth, Igor Aharonovich. 2020-05-21. Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride. https://arxiv.org/abs/2005.10699

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