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arXiv · 2004.01692

Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation

Kyung Ho Kim·Hans He·Claudia Struzzi·Alexei Zakharov·Cristina Giusca·Alexander Tzalenchuk·Rositsa Yakimova·Sergey Kubatkin·Samuel Lara-Avila
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Abstract

We present a study of quasi-free-standing monolayer graphene obtained by intercalation of Au atoms at the interface between the carbon buffer layer (Bu-L) and the silicon-terminated face (0001) of 4H-silicon carbide. Au intercalation is achieved by deposition of atomically thin Au on the Bu-L followed by annealing at 850 {\deg}C in an Argon atmosphere. We explore the intercalation of Au and decoupling of the Bu-L into quasi-free-standing monolayer graphene by surface science characterizations and electron transport in top-gated electronic devices. By gate-dependent magnetotransport we find that the Au-intercalated buffer layer displays all properties of monolayer graphene, namely gate tunable ambipolar transport across the Dirac point, and n- or p-type doping depending on the Au content.

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Kyung Ho Kim, Hans He, Claudia Struzzi, Alexei Zakharov, Cristina Giusca, Alexander Tzalenchuk, Rositsa Yakimova, Sergey Kubatkin, Samuel Lara-Avila. 2020-04-03. Ambipolar charge transport in quasi-free-standing monolayer graphene on SiC obtained by gold intercalation. https://doi.org/10.1103/physrevb.102.165403

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