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arXiv · 2004.00765

Spin-Dependent Charge-Carrier Recombination Processes in Tris(8-Hydroxyquinolinato) Aluminum

H. Popli·X. Liu·T. H. Tennahewa·M. Y. Teferi·E. Lafalce·H. Malissa·Z. V. Vardeny·C. Boehme
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Abstract

We have studied the nature and dynamics of spin-dependent charge carrier recombination in Tris(8-hydroxyquinolinato) aluminum (Alq$_3$) films in light emitting diodes at room temperature using continuous wave and pulsed electrically detected magnetic resonance (EDMR) spectroscopy. We found that the EDMR signal is dominated by an electron-hole recombination process, and another, weaker EDMR signal whose fundamental nature was investigated. From the pulsed EDMR measurements we obtained a carrier spin relaxation time, $T_2 = 45\pm 25$ ns which is much shorter than $T_2$ in conjugated polymers, but relatively long for a molecule containing elements with high atomic number. Using multi-frequency continuous wave EDMR spectroscopy, we obtained the local hyperfine field distributions for electrons and holes, as well as their respective spin-orbit coupling induced g-factor and g-strain values.

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H. Popli, X. Liu, T. H. Tennahewa, M. Y. Teferi, E. Lafalce, H. Malissa, Z. V. Vardeny, C. Boehme. 2020-04-02. Spin-Dependent Charge-Carrier Recombination Processes in Tris(8-Hydroxyquinolinato) Aluminum. https://doi.org/10.1103/physrevapplied.14.034012

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