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arXiv · 2003.07938

Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$

Tiancong Zhu·Alexander J. Bishop·Tong Zhou·Menglin Zhu·Dante J. O'Hara·Alexander A. Baker·Shuyu Cheng·Robert C. Walko·Jacob J. Repicky·Jay A. Gupta·Chris M. Jozwiak·Eli Rotenberg·Jinwoo Hwang·Igor Žutić·Roland K. Kawakami
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Abstract

The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.

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Tiancong Zhu, Alexander J. Bishop, Tong Zhou, Menglin Zhu, Dante J. O'Hara, Alexander A. Baker, Shuyu Cheng, Robert C. Walko, Jacob J. Repicky, Jay A. Gupta, Chris M. Jozwiak, Eli Rotenberg, Jinwoo Hwang, Igor Žutić, Roland K. Kawakami. 2020-03-17. Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$. https://doi.org/10.1021/acs.nanolett.1c00141

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