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arXiv · 2003.06480

Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells

Faiz Ahmad·Akhlesh Lakhtakia·Peter B. Monk
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Abstract

An optoelectronic optimization was carried out for an AlGaAs solar cell containing (i) an n-AlGaAs absorber layer with a graded bandgap and (ii) a periodically corrugated Ag backreflector combined with localized ohmic Pd-Ge-Au backcontacts. The bandgap of the absorber layer was varied either sinusoidally or linearly. An efficiency of 33.1% with the 2000-nm-thick n-AlGaAs absorber layer is predicted with linearly graded bandgap along with silver backreflector and localized ohmic backcontacts, in comparison to 27.4% efficiency obtained with homogeneous bandgap and a continuous ohmic backcontact. Sinusoidal grading of the bandgap {is predicted to enhance} the maximum efficiency to 34.5%. Thus, grading the bandgap of the absorber layer, along with a periodically corrugated Ag backreflector and localized ohmic Pd-Ge-Au backcontacts can help realize ultrathin and high-efficient AlGaAs solar cells for terrestrial applications.

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Faiz Ahmad, Akhlesh Lakhtakia, Peter B. Monk. 2020-03-13. Optoelectronic optimization of graded-bandgap thin-film AlGaAs solar cells. https://doi.org/10.1364/ao.381246

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