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arXiv · 2003.04120

Exciton-polariton interference controlled by electric field

D. K. Loginov·P. A. Belov·V. G. Davydov·I. Ya. Gerlovin·I. V. Ignatiev·A. V. Kavokin
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Abstract

Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential reflection spectroscopy. An excellent agreement between the experimental data and the results of calculations using semi-classical non-local dielectric response model confirms the validity of the method and paves the way for the realisation of excitonic Datta-and-Das transistors. In full analogy with the spin-orbit transistor proposed by Datta and Das [Appl. Phys. Lett. {\bf 56}, 665 (1990)], the switch between positive and negative interference of exciton polaritons propagating forward and backward in a GaAs film is achieved by application of an electric field with non-zero component in the plane of the quantum well layer.

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D. K. Loginov, P. A. Belov, V. G. Davydov, I. Ya. Gerlovin, I. V. Ignatiev, A. V. Kavokin. 2020-03-09. Exciton-polariton interference controlled by electric field. https://doi.org/10.1103/physrevresearch.2.033510

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