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arXiv · 2002.09835

Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

Shintaro Adachi·Ryo Matsumoto·Sayaka Yamamoto·Takafumi D. Yamamoto·Kensei Terashima·Yoshito Saito·Miren Esparza Echevarria·Pedro Baptista de Castro·Peng Song·Suguru Iwasaki·Hiroyuki Takeya·Yoshihiko Takano
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Abstract

We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity (HTS).

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Shintaro Adachi, Ryo Matsumoto, Sayaka Yamamoto, Takafumi D. Yamamoto, Kensei Terashima, Yoshito Saito, Miren Esparza Echevarria, Pedro Baptista de Castro, Peng Song, Suguru Iwasaki, Hiroyuki Takeya, Yoshihiko Takano. 2020-05-23. Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell. https://doi.org/10.1063/5.0004973

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