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arXiv · 2002.00630

Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles

Guillaume Brunin·Henrique Pereira Coutada Miranda·Matteo Giantomassi·Miquel Royo·Massimiliano Stengel·Matthieu J. Verstraete·Xavier Gonze·Gian-Marco Rignanese·Geoffroy Hautier
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Abstract

We describe a new approach to compute the electron-phonon self-energy and carrier mobilities in semiconductors. Our implementation does not require a localized basis set to interpolate the electron-phonon matrix elements, with the advantage that computations can be easily automated. Scattering potentials are interpolated on dense $\mathbf{q}$ meshes using Fourier transforms and ab initio models to describe the long-range potentials generated by dipoles and quadrupoles. To reduce significantly the computational cost, we take advantage of crystal symmetries and employ the linear tetrahedron method and double-grid integration schemes, in conjunction with filtering techniques in the Brillouin zone. We report results for the electron mobility in Si, GaAs, and GaP obtained with this new methodology.

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Guillaume Brunin, Henrique Pereira Coutada Miranda, Matteo Giantomassi, Miquel Royo, Massimiliano Stengel, Matthieu J. Verstraete, Xavier Gonze, Gian-Marco Rignanese, Geoffroy Hautier. 2020-02-03. Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles. https://doi.org/10.1103/physrevb.102.094308

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