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arXiv · 1911.00342

Microscopic model of stacking-fault potential and exciton wave function in GaAs

Mikhail V. Durnev·Mikhail M. Glazov·Xiayu Linpeng·Maria L. K. Viitaniemi·Bethany Matthews·Steven R. Spurgeon·P. V. Sushko·Andreas D. Wieck·Arne Ludwig·Kai-Mei C. Fu
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Abstract

Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.

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Mikhail V. Durnev, Mikhail M. Glazov, Xiayu Linpeng, Maria L. K. Viitaniemi, Bethany Matthews, Steven R. Spurgeon, P. V. Sushko, Andreas D. Wieck, Arne Ludwig, Kai-Mei C. Fu. 2019-11-01. Microscopic model of stacking-fault potential and exciton wave function in GaAs. https://doi.org/10.1103/physrevb.101.125420

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