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arXiv · 1909.10709

Antiferromagnetic Skyrmion-Based Logic Gates Controlled by Electric Currents and Fields

Xue Liang·Jing Xia·Xichao Zhang·Motohiko Ezawa·Oleg A. Tretiakov·Xiaoxi Liu·Lei Qiu·Guoping Zhao·Yan Zhou
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Abstract

Antiferromagnets are promising materials for future spintronic applications due to their unique properties including zero stray fields, robustness versus external magnetic fields and ultrafast dynamics, which have attracted extensive interest in recent years. In this work, we investigate the dynamics of isolated skyrmions in an antiferromagnetic nanotrack with a voltage-gated region. It is found that the skyrmion can be jointly controlled by the driving current and the voltage-controlled magnetic anisotropy gradient. We further propose a design of logic computing gates based on the manipulation of antiferromagnetic skyrmions, which is numerically realized combining several interactions and phenomena, including the spin Hall effect, voltage-controlled magnetic anisotropy effect, skyrmion-skyrmion interaction, and skyrmion-edge interaction. The proposed logic gates can perform the basic Boolean operations of the logic AND, OR, NOT, NAND and NOR gates. Our results may have a great impact on fundamental physics, and be useful for designing future non-volatile logic computing devices with ultra-low energy consumption and ultra-high storage density.

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Xue Liang, Jing Xia, Xichao Zhang, Motohiko Ezawa, Oleg A. Tretiakov, Xiaoxi Liu, Lei Qiu, Guoping Zhao, Yan Zhou. 2019-09-24. Antiferromagnetic Skyrmion-Based Logic Gates Controlled by Electric Currents and Fields. https://doi.org/10.1063/5.0056259

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