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arXiv · 1909.09727

Nucleation of Dislocations in 3.9 nm Nanocrystals at High Pressure

Abhinav Parakh·Sangryun Lee·K. Anika Harkins·Mehrdad T. Kiani·David Doan·Martin Kunz·Andrew Doran·Lindsey A. Hanson·Seunghwa Ryu·X. Wendy Gu
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Abstract

As circuitry approaches single nanometer length scales, it is important to predict the stability of metals at these scales. The behavior of metals at larger scales can be predicted based on the behavior of dislocations, but it is unclear if dislocations can form and be sustained at single nanometer dimensions. Here, we report the formation of dislocations within individual 3.9 nm Au nanocrystals under nonhydrostatic pressure in a diamond anvil cell. We used a combination of x-ray diffraction, optical absorbance spectroscopy, and molecular dynamics simulation to characterize the defects that are formed, which were found to be surface-nucleated partial dislocations. These results indicate that dislocations are still active at single nanometer length scales and can lead to permanent plasticity.

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Abhinav Parakh, Sangryun Lee, K. Anika Harkins, Mehrdad T. Kiani, David Doan, Martin Kunz, Andrew Doran, Lindsey A. Hanson, Seunghwa Ryu, X. Wendy Gu. 2019-09-20. Nucleation of Dislocations in 3.9 nm Nanocrystals at High Pressure. https://doi.org/10.1103/physrevlett.124.106104

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