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arXiv · 1909.01538

Excitation efficiency and limitations of the luminescence of Eu3+ ions in GaN

Dolf Timmerman·Brandon Mitchell·Shuhei Ichikawa·Jun Tatebayashi·Masaaki Ashida·Yasufumi Fujiwara
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Abstract

The excitation efficiency and external luminescence quantum efficiency of trivalent Eu3+ ions doped into gallium nitride (GaN) was studied under optical and electrical excitation. For small pump fluences it was found that the excitation of Eu3+ ions is limited by an efficient carrier trap that competes in the energy transfer from the host material. For large pump fluences the limited number of high-efficiency Eu3+ sites, and the small excitation cross-section of the majority Eu3+ site, limit the quantum efficiency. At low temperatures under optimal excitation conditions, the external luminescence quantum efficiency reached a value of 46%. These results show the high potential for this material as an efficient light emitter, and demonstrates the importance of the excitation conditions on the light output efficiency.

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Dolf Timmerman, Brandon Mitchell, Shuhei Ichikawa, Jun Tatebayashi, Masaaki Ashida, Yasufumi Fujiwara. 2019-09-04. Excitation efficiency and limitations of the luminescence of Eu3+ ions in GaN. https://doi.org/10.1103/physrevapplied.13.014044

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