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arXiv · 1909.01194

Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets

Shiqiao Du·Peizhe Tang·Jiaheng Li·Zuzhang Lin·Yong Xu·Wenhui Duan·Angel Rubio
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Abstract

Recent advances in tuning electronic, magnetic, and topological properties of two-dimensional (2D) magnets have opened a new frontier in the study of quantum physics and promised exciting possibilities for future quantum technologies. In this study, we find that the dual-gate technology can well tune the electronic and topological properties of antiferromagnetic (AFM) even septuple-layer (SL) MnBi$_2$Te$_4$ thin films. Under an out-of-plane electric field that breaks $\mathcal{PT}$ symmetry, the Berry curvature of the thin film could be engineered efficiently, resulting in a huge change of anomalous Hall (AH) signal. Beyond the critical electric field, the double-SL MnBi$_2$Te$_4$ thin film becomes a Chern insulator with a high Chern number of 3. We further demonstrate that such 2D material can be used as an AFM switch via electric-field control of the AH signal. These discoveries inspire the design of low-power memory prototype for future AFM spintronic applications.

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Shiqiao Du, Peizhe Tang, Jiaheng Li, Zuzhang Lin, Yong Xu, Wenhui Duan, Angel Rubio. 2019-09-03. Berry Curvature Engineering by Gating Two-Dimensional Antiferromagnets. https://doi.org/10.1103/physrevresearch.2.022025

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