A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

G. Iacobucci; R. Cardarelli; S. Débieux; F. A. Di Bello; Y. Favre; D. Hayakawa; M. Kaynak; M. Nessi; L. Paolozzi; H. Rücker; DMS Sultan; P. Valerio

doi:10.1088/1748-0221/14/11/p11008

arXiv · 1908.09709

A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology

G. Iacobucci·R. Cardarelli·S. Débieux·F. A. Di Bello·Y. Favre·D. Hayakawa·M. Kaynak·M. Nessi·L. Paolozzi·H. Rücker·DMS Sultan·P. Valerio

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Abstract

A monolithic pixelated silicon detector designed for high time resolution has been produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP Mikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65 {\mu}m and 130 {\mu}m side. The SiGe front-end electronics implemented provides an equivalent noise charge of 90 and 160 electrons for a pixel capacitance of 70 and 220 fF, respectively, and a total time walk of less than 1 ns. Lab measurements with a 90Sr source show a time resolution of the order of 50 ps. This result is competitive with silicon technologies that integrate an avalanche gain mechanism.

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G. Iacobucci, R. Cardarelli, S. Débieux, F. A. Di Bello, Y. Favre, D. Hayakawa, M. Kaynak, M. Nessi, L. Paolozzi, H. Rücker, DMS Sultan, P. Valerio. 2019-08-26. A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology. https://doi.org/10.1088/1748-0221/14/11/p11008

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