Biexciton in one-dimensional Mott insulators

T. Miyamoto; T. Kakizaki; T. Terashige; D. Hata; H. Yamakawa; T. Morimoto; N. Takamura; H. Yada; Y. Takahashi; T. Hasegawa; H. Matsuzaki; T. Tohyama; H. Okamoto

doi:10.1038/s42005-019-0223-8

arXiv · 1907.13338

Biexciton in one-dimensional Mott insulators

T. Miyamoto·T. Kakizaki·T. Terashige·D. Hata·H. Yamakawa·T. Morimoto·N. Takamura·H. Yada·Y. Takahashi·T. Hasegawa·H. Matsuzaki·T. Tohyama·H. Okamoto

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Abstract

Mott insulators sometimes show dramatic changes in their electronic states after photoirradiation, as indicated by photoinduced Mott-insulator-to-metal transition. In the photoexcited states of Mott insulators, electron wavefunctions are more delocalized than in the ground state, and long-range Coulomb interactions play important roles in charge dynamics. However, their effects are difficult to discriminate experimentally. Here, we show that in a one-dimensional Mott insulator, bis(ethylenedithio)tetrathiafulvalene-difluorotetracyanoquinodimethane (ET-F2TCNQ), long-range Coulomb interactions stabilize not only excitons, doublon-holon bound states, but also biexcitons. By measuring terahertz-electric-field-induced reflectivity changes, we demonstrate that odd- and even-parity excitons are split off from a doublon-holon continuum. Further, spectral changes of reflectivity induced by a resonant excitation of the odd-parity exciton reveals that an exciton-biexciton transition appears just below the exciton-transition peak. Theoretical simulations show that long-range Coulomb interactions over four sites are necessary to stabilize the biexciton. Such information is indispensable for understanding the non-equilibrium dynamics of photoexcited Mott insulators.

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T. Miyamoto, T. Kakizaki, T. Terashige, D. Hata, H. Yamakawa, T. Morimoto, N. Takamura, H. Yada, Y. Takahashi, T. Hasegawa, H. Matsuzaki, T. Tohyama, H. Okamoto. 2019-07-31. Biexciton in one-dimensional Mott insulators. https://doi.org/10.1038/s42005-019-0223-8

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