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arXiv · 1907.09947

High-Chern-Number and High-Temperature Quantum Hall Effect without Landau Levels

Jun Ge·Yanzhao Liu·Jiaheng Li·Hao Li·Tianchuang Luo·Yang Wu·Yong Xu·Jian Wang
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Abstract

The quantum Hall effect (QHE) with quantized Hall resistance of h/νe2 starts the research on topological quantum states and lays the foundation of topology in physics. Afterwards, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C|=1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C>1). Here, we report the experimental discovery of high-Chern-number QHE (C=2) without Landau levels and C=1 Chern insulator state displaying nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.

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Jun Ge, Yanzhao Liu, Jiaheng Li, Hao Li, Tianchuang Luo, Yang Wu, Yong Xu, Jian Wang. 2020-05-01. High-Chern-Number and High-Temperature Quantum Hall Effect without Landau Levels. https://doi.org/10.1093/nsr%2Fnwaa089

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