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arXiv · 1907.02867

Enhancing electrical conductivity of room temperature deposited Sn-doped In$_2$O$_3$ thin films by hematite seed layers

Christian Lohaus·Céline Steinert·Getnet Deyu·Joachim Brötz·Wolfram Jaegermann·Andreas Klein
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Abstract

Hematite Fe$_2$O$_3$ seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to $\sigma = 3300\,{\rm S/cm}$ are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.

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Christian Lohaus, Céline Steinert, Getnet Deyu, Joachim Brötz, Wolfram Jaegermann, Andreas Klein. 2019-07-05. Enhancing electrical conductivity of room temperature deposited Sn-doped In$_2$O$_3$ thin films by hematite seed layers. https://doi.org/10.1063/1.5022683

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