arXiv · 1906.09758
Voltage-controlled skyrmion-based artificial synapse in a synthetic antiferromagnet
Abstract
Spintronics exhibits significant potential in neuromorphic computing system with high speed, high integration density, and low dissipation. In this letter, we propose an ultralow-dissipation spintronic memristor composed of a synthetic antiferromagnet (SAF) and a piezoelectric substrate. Skyrmions/skyrmion bubbles can be generated in the upper layer of SAF with weak anisotropy energy (Ea). With a weak electric field on the heterostructure, the interlayer antiferromagnetic coupling can be manipulated, giving rise to a continuous transition between a large skyrmion bubble and a small skyrmion. This thus induces the variation of the resistance of a magnetic tunneling junction. The synapse based on this principle may manipulate the weight in a wide range at a cost of a very low energy consumption of 0.3 fJ. These results pave a way to ultralow power neuromorphic computing applications.
Explore related subjects
Keep this discovery
Ziyang Yu, Maokang Shen, Zhongming Zeng, Shiheng Liang, Yong Liu, Ming Chen, Zhenhua Zhang, Zhihong Lu, Yue Zhang, Rui Xiong. 2019-06-24. Voltage-controlled skyrmion-based artificial synapse in a synthetic antiferromagnet. https://arxiv.org/abs/1906.09758
Cite the original work for its findings. Save a collection to share your selection of sources.