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arXiv · 1906.04988

Voltage-induced high-speed DW motion in a synthetic antiferromagnet

Lulu Chen·Maokang Shen·Yingying Peng·Xinyu Liu·Wei Luo·Xiaofei Yang·Yue Zhang
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Abstract

Voltage-induced motion of a magnetic domain wall (DW) has potential in developing novel devices with ultralow dissipation. However, the speed for the voltage-induced DW motion (VIDWM) in a single ferromagnetic layer is usually very low. In this work, we proposed VIDWM with high speed in a synthetic antiferromaget (SAF). The velocity for the coupled DWs in the SAF is significantly higher than its counterpart in a single ferromagnetic layer. Strong interlayer antiferromagnetic exchange coupling plays a critical role for the high DW velocity since it inhibits the tilting of DW plane with strong Dzyaloshinskii-Moriya interaction. On the other hand, the Walker breakdown of DW motion is also inhibited due to the stabilization of moment orientation under a strong interlayer antiferromagnetic coupling. In theory, the voltage-induced gradient of magnetic anisotropy is proved to be equal to an effective magnetic field that drives DW.

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Lulu Chen, Maokang Shen, Yingying Peng, Xinyu Liu, Wei Luo, Xiaofei Yang, Yue Zhang. 2019-06-12. Voltage-induced high-speed DW motion in a synthetic antiferromagnet. https://doi.org/10.1088/1361-6463%2Fab3fc9

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