Optoelectronic mixing with high frequency graphene transistors

Alberto Montanaro; Wei Wei; Domenico De Fazio; Ugo Sassi; Giancarlo Soavi; Andrea C Ferrari; Henri Happy; Pierre Legagneux; Emiliano Pallecchi

arXiv · 1905.09967

Optoelectronic mixing with high frequency graphene transistors

Alberto Montanaro·Wei Wei·Domenico De Fazio·Ugo Sassi·Giancarlo Soavi·Andrea C Ferrari·Henri Happy·Pierre Legagneux·Emiliano Pallecchi

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Abstract

Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems.

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Alberto Montanaro, Wei Wei, Domenico De Fazio, Ugo Sassi, Giancarlo Soavi, Andrea C Ferrari, Henri Happy, Pierre Legagneux, Emiliano Pallecchi. 2019-05-23. Optoelectronic mixing with high frequency graphene transistors. https://arxiv.org/abs/1905.09967

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