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arXiv · 1905.04504

Investigation of domain wall pinning by square anti-notches and its applications in three terminals MRAM

C. I. L. de Araujo·J. C. S. Gomes·D. Toscano·E. L. M. Paixao·P. Z. Coura·F. Sato·D. V. P. Massote·S. A. Leonel
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Abstract

In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are presented. This allow us the proposition of a three-terminals device based on domain-wall pinning. We obtain, with very small pulses of current applied parallel to the nanotrack, a fast motion of the domain-wall between anti-notches. In addition to this, a swift stabilization of the pinned domain-wall is observed with a high percentage of orthogonal magnetization, enabling high magnetoresistive signal measurement. Thus, our proposed device is a promising magnetoresistive random access memories with good scalability, duration, and high speed information storage.

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C. I. L. de Araujo, J. C. S. Gomes, D. Toscano, E. L. M. Paixao, P. Z. Coura, F. Sato, D. V. P. Massote, S. A. Leonel. 2019-05-11. Investigation of domain wall pinning by square anti-notches and its applications in three terminals MRAM. https://doi.org/10.1063/1.5089949

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