arXiv · 1905.04070
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy
Abstract
The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.
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Tomoki Tsuchiya, Tufan Roy, Kelvin Elphick, Jun Okabayashi, Lakhan Bainsla, Tomohiro Ichinose, Kazuya Suzuki, Masahito Tsujikawa, Masafumi Shirai, Atsufumi Hirohata, Shigemi Mizukami. 2019-05-10. Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy. https://doi.org/10.1103/physrevmaterials.3.084403
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