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arXiv · 1905.03874

Influence of radiation damage on the absorption of near-infrared light in silicon

C. Scharf·F. Feindt·R. Klanner
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Abstract

The absorption length, $\lambda_{abs}$, of light with wavelengths between 0.95 and 1.30$~\mu$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been measured. It is found that $\lambda_{abs}$ decreases with fluence due to radiation-induced defects. A phenomenological parametrisation of the radiation-induced change of $\lambda_{abs}$ as a function of wavelength and neutron equivalent fluence at room temperature is given. The observation of the decrease of $\lambda_{abs}$ with irradiation is confirmed by edge-TCT measurements on irradiated silicon strip detectors. Using the measured wavelength dependence of $\lambda_{abs}$, the change of the silicon band-gap with fluence is determined.

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C. Scharf, F. Feindt, R. Klanner. 2019-05-09. Influence of radiation damage on the absorption of near-infrared light in silicon. https://doi.org/10.1016/j.nima.2020.163955

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