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arXiv · 1905.03365

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Der-Hsien Lien·Shiekh Zia Uddin·Matthew Yeh·Matin Amani·Hyungjin Kim·Joel W. Ager III·Eli Yablonovitch·Ali Javey
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Abstract

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic by electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

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Der-Hsien Lien, Shiekh Zia Uddin, Matthew Yeh, Matin Amani, Hyungjin Kim, Joel W. Ager III, Eli Yablonovitch, Ali Javey. 2019-05-08. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. https://doi.org/10.1126/science.aaw8053

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