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Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

Sandeep Kumar·Surani B. Dolmanan·Sudhiranjan Tripathy·Rangarajan Muralidharan·Digbijoy N. Nath
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Abstract

In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices with meandering gate-drain access region (M-HEMT) are found to be 62% more compared to that of conventional HEMT while the ON resistance suffers by 76%, leading to an overall improvement in the BFOM for by 28%. 3D-TCAD simulations show that the decrease in the peak electric field at the gate edge was responsible for increased breakdown voltage.

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Sandeep Kumar, Surani B. Dolmanan, Sudhiranjan Tripathy, Rangarajan Muralidharan, Digbijoy N. Nath. 2019-05-06. Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs. https://doi.org/10.1002/pssa.201900766

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