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arXiv · 1904.10323

Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure

A. Müller·C. Şahin·M. Z. Minhas·M. E. Flatté·G. Schmidt
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Abstract

We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the current through a narrow channel of insulating $\mathrm{SrTiO_3}$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low and elevated temperatures. The transistor shows strong electric-field and temperature-dependent behaviour with a steep sub-threshold slope %of up to as small as $10\:\mathrm{mV/decade}$ and a transconductance as high as $g_m\approx 22 \: \mathrm{μA/V}$. A fully consistent transport model for the drain-source tunneling reproduces the measured steep sub-threshold slope.

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A. Müller, C. Şahin, M. Z. Minhas, M. E. Flatté, G. Schmidt. 2019-04-23. Nanoscale tunnel field effect transistor based on a complex oxide lateral heterostructure. https://doi.org/10.1103/physrevapplied.11.064026

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