Role of disorder and correlations in metal-insulator transition in ultrathin SrVO3 films

Gaomin Wang; Zhen Wang; Meng Meng; Mohammad Saghayezhian; Lina Chen; Chen Chen; Hangwen Guo; Yimei Zhu; Ward Plummer; Jiandi Zhang

doi:10.1103/physrevb.100.155114

arXiv · 1904.05726

Role of disorder and correlations in metal-insulator transition in ultrathin SrVO3 films

Gaomin Wang·Zhen Wang·Meng Meng·Mohammad Saghayezhian·Lina Chen·Chen Chen·Hangwen Guo·Yimei Zhu·Ward Plummer·Jiandi Zhang

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Abstract

Metallic oxide SrVO3 represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover in thin films due to its simple cubic symmetry with one electron in the 3d state in the bulk. Here we report a deviation of chemical composition and distortion of lattice structure existing in the initial 3 unit cells of SrVO3 films grown on SrTiO3 (001) from its bulk form, which shows a direct correlation to the thickness-dependent MIT. In-situ photoemission and scanning tunneling spectroscopy indicate a MIT at the critical thickness of ~3 unit cell (u.c.), which coincides with the formation of a (root2Xroot2)R45 surface reconstruction. However, atomically resolved scanning transmission electron microscopy and electron energy loss spectroscopy show depletion of Sr, change of V valence, thus implying the existence of a significant amount of oxygen vacancies in the 3 u.c. of SrVO3 near the interface. Transport and magneto-transport measurements further reveal that disorder, rather than electron correlations, is likely to be the main cause for the MIT in the SrVO3 ultrathin films.

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Gaomin Wang, Zhen Wang, Meng Meng, Mohammad Saghayezhian, Lina Chen, Chen Chen, Hangwen Guo, Yimei Zhu, Ward Plummer, Jiandi Zhang. 2019-04-11. Role of disorder and correlations in metal-insulator transition in ultrathin SrVO3 films. https://doi.org/10.1103/physrevb.100.155114

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