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arXiv · 1904.05006

Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

Koji Ito·Takuma Kobayashi·Tsunenobu Kimoto
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Abstract

We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)-annealed samples, the interface state density ($D_{\rm it}$) near the conduction band edge ($E_{\rm C}$) of SiC did not increase by subsequent vacuum annealing. For phosphoryl chloride (POCl$_3$)-annealed samples, in contrast, $D_{\rm it}$ at $E_{\rm C}-0.2$ eV increased from $1.3\times10^{10}$ to $2.2\times10^{12}$ cm$^{-2}$eV$^{-1}$ by the vacuum annealing, and the channel mobility of MOS field effect transistors (MOSFETs) decreased from 109 to 44 cm$^2$V$^{-1}$s$^{-1}$. Mechanism of the observed increase in $D_{\rm it}$ was discussed based on the results of secondary ion mass spectrometry measurement.

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Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto. 2019-04-10. Influence of vacuum annealing on interface properties of SiC (0001) MOS structures. https://doi.org/10.7567/1347-4065/ab2557

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