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arXiv · 1903.08949

Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions

Piotr Rzeszut·Witold Skowroński·Sławomir Ziętek·Jerzy Wrona·Tomasz Stobiecki
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Abstract

Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs fabricated on a single wafer stack, with a serial connections realized using top-to-bottom vias. Tunneling magnetoreistance effect above 130%, current induced magnetization switching in zero external magnetic field and stability diagram analysis of single, two-bit and three-bit cells are presented together with thermal stability. The proposed design is easy to manufacture and can lead to increase capacity of future MRAM devices.

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Piotr Rzeszut, Witold Skowroński, Sławomir Ziętek, Jerzy Wrona, Tomasz Stobiecki. 2019-03-21. Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions. https://doi.org/10.1063/1.5097748

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