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arXiv · 1903.07385

Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces

N. K. Lewis·Y. Lassailly·L. Martinelli·I. Vobornik·J. Fujii·C. Bigi·E. Brunkow·N. B. Clayburn·T. J. Gay·W. R. Flavell·E. A. Seddon
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Abstract

The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarisations. Three surface states ($S_1$, $S_2$ and $S_4$), observed in the Si(110)"16 x 2" reconstruction, were assigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of the four surface states, $S_3$, was observed in both the Si(110)"16 x 2" and 1 x 1 band maps and consequently attributed to the pervasive Si zigzag chains that are components of both the Si(110)"16 x 2" and 1 x 1 surfaces. A state in the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-buckling model of the Si(110)"16 x 2" surface. Whilst room temperature measurements of $P_y$ and $P_z$ were statistically compatible with zero, $P_x$ measurements of the enantiomorphic A-type and B-type Si(110)"16 x 2" surfaces gave small average polarisations of around 1.5\% that were opposite in sign. Further measurements at 77 K on A-type Si(110)"16 x 2" surface gave a smaller value of +0.3\%. An upper limit of $\sim1\%$ may thus be taken for the longitudinal polarisation.

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N. K. Lewis, Y. Lassailly, L. Martinelli, I. Vobornik, J. Fujii, C. Bigi, E. Brunkow, N. B. Clayburn, T. J. Gay, W. R. Flavell, E. A. Seddon. 2019-08-08. Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces. https://doi.org/10.1103/physrevb.100.075302

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