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arXiv · 1902.06374

Temperature-driven modification of surface electronic structure on bismuth, a topological border material

Y. Ohtsubo·Y. Yamashita·J. Kishi·S. Ideta·K. Tanaka·H. Yamane·J. E. Rault·P. Le Fèvre·F. Bertran·S. Kimura
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Abstract

Single crystalline bismuth (Bi) is known to have a peculiar electronic structure which is very close to the topological phase transition. The modification of the surface states of Bi depending on the temperature are revealed by angle-resolved photoelectron spectroscopy (ARPES). At low temperature, the upper branch of the surface state merged to the projected bulk conduction bands around the $\bar{M}$ point of the surface Brillouin zone (SBZ). In contrast, the same branch merged to the projected bulk valence bands at high temperature (400 K). Such behavior could be interpreted as a topological phase transition driven by the temperature, which might be applicable for future spin-thermoelectric devices. We discuss the possible mechanisms to cause such transition, such as the thermal lattice distortion and electron-phonon coupling.

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Y. Ohtsubo, Y. Yamashita, J. Kishi, S. Ideta, K. Tanaka, H. Yamane, J. E. Rault, P. Le Fèvre, F. Bertran, S. Kimura. 2019-02-18. Temperature-driven modification of surface electronic structure on bismuth, a topological border material. https://doi.org/10.1088/1361-6463%2Fab1515

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