Thick GaN film stress-induced self-separation

Vladislav Voronenkov; Andrey Leonidov; Yuri Lelikov; Andrey Zubrilov; Yuri Shreter

doi:10.1109/eiconrus.2019.8657271

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arXiv · 1902.03463

Thick GaN film stress-induced self-separation

Vladislav Voronenkov·Andrey Leonidov·Yuri Lelikov·Andrey Zubrilov·Yuri Shreter

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Abstract

Cracking of thick GaN films on sapphire substrates during the cooling down after the growth was studied. The cracking was suppressed by increasing the film-to-substrate thickness ratio and by using an intermediate carbon buffer layer, that reduced the binding energy between the GaN film and the substrate. Wafer-scale self-separation of thick GaN films has been demonstrated.

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Vladislav Voronenkov, Andrey Leonidov, Yuri Lelikov, Andrey Zubrilov, Yuri Shreter. 2019-02-09. Thick GaN film stress-induced self-separation. https://doi.org/10.1109/eiconrus.2019.8657271

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