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arXiv · 1901.10891

Gate-tunable Electronic Transport in p-type GaSb Quantum Wells

Matija Karalic·Christopher Mittag·Michael Hug·Kenji Shibata·Thomas Tschirky·Werner Wegscheider·R. Winkler·Klaus Ensslin·Thomas Ihn
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Abstract

We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses and quantum scattering times of these spin-split subbands and find that the results are in agreement with band structure calculations. Additionally, we study the weak anti-localization correction to the conductivity present around zero magnetic field and obtain information on the phase coherence. These results establish GaSb quantum wells as a platform for two-dimensional hole physics and lay the foundations for future experiments in this system.

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Matija Karalic, Christopher Mittag, Michael Hug, Kenji Shibata, Thomas Tschirky, Werner Wegscheider, R. Winkler, Klaus Ensslin, Thomas Ihn. 2019-03-28. Gate-tunable Electronic Transport in p-type GaSb Quantum Wells. https://doi.org/10.1103/physrevb.99.115435

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