Moir\'e quantum well states in tiny angle two dimensional semi-conductors

M. Fleischmann; R. Gupta; S. Sharma; S. Shallcross

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arXiv · 1901.04679

Moir\'e quantum well states in tiny angle two dimensional semi-conductors

M. Fleischmann·R. Gupta·S. Sharma·S. Shallcross

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Abstract

The valence band edge in tiny angle twist bilayers of MoS$_2$ and phosphorene is shown to consist of highly localized energy levels created by a `moir\'e quantum well', i.e. trapped by the interlayer moir\'e potential. These approximately uniformly spaced energy levels exhibit a richly modulated charge density, becoming ultra-localized at the valence band maximum. The number and spacing of such levels is controllable by the twist angle and interlayer interaction strength, suggesting the possibility of `moir\'e engineering' ordered arrays of quantum dots in 2d twist semi-conductors.

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M. Fleischmann, R. Gupta, S. Sharma, S. Shallcross. 2019-01-15. Moir\'e quantum well states in tiny angle two dimensional semi-conductors. https://arxiv.org/abs/1901.04679

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