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arXiv · 1901.01682

A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques

Teren Liu·Tao Fang·Karen Kavanagh·Guangrui·Xia
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Abstract

This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch selected regions of few-layer black phosphorus with an atomic layer accuracy. This method is deep-UV and e-beam lithography process compatible,and is free of oxygen and other common doping sources. It provides a feasible patterning approach for largescale manufacturing of few-layer BP materials and devices.

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Teren Liu, Tao Fang, Karen Kavanagh, Guangrui, Xia. 2019-01-07. A wet etching method for few-layer black phosphorus with an atomic accuracy and compatibility with major lithography techniques. https://arxiv.org/abs/1901.01682

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