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arXiv · 1812.11069

Valley-Hall photonic topological insulators with dual-band kink states

Qiaolu Chen·Li Zhang·Mengjia He·Zuojia Wang·Xiao Lin·Fei Gao·Yihao Yang·Baile Zhang·Hongsheng Chen
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Abstract

Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF has been introduced into photonic systems, and several valley-Hall photonic topological insulators (PTIs) have been experimentally demonstrated. However, in the previous valley-Hall PTIs, topological kink states only work at a single frequency band, which limits potential applications in multiband waveguides, filters, communications, and so on. To overcome this challenge, here we experimentally demonstrate a valley-Hall PTI, where the topological kink states exist at two separated frequency bands, in a microwave substrate-integrated circuitry. Both the simulated and experimental results demonstrate the dual-band valley-Hall topological kink states are robust against the sharp bends of the internal domain wall with negligible inter-valley scattering. Our work may pave the way for multi-channel substrate-integrated photonic devices with high efficiency and high capacity for information communications and processing.

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Qiaolu Chen, Li Zhang, Mengjia He, Zuojia Wang, Xiao Lin, Fei Gao, Yihao Yang, Baile Zhang, Hongsheng Chen. 2018-12-28. Valley-Hall photonic topological insulators with dual-band kink states. https://arxiv.org/abs/1812.11069

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