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arXiv · 1812.06402

STM/S Observations of Graphene on SiC(0001) Etched by H-plasma

André E. B. Amend·Tomohiro Matsui·Hiroki Hibino·Hiroshi Fukuyama
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Abstract

Monolayer graphene epitaxially grown on SiC(0001) was etched by H-plasma and studied by scanning tunneling microscopy and spectroscopy. The etching created partly hexagonal nanopits of monatomic depth as well as elevated regions with a height of about 0.12 nm which are stable at $T$ = 78 K. The symmetric tunnel spectrum about the Femi energy and the absence of a $6\times6$ corrugation on the elevated regions suggest that in these regions the carbon buffer layer is decoupled from the SiC substrate and quasi-free-standing bilayer graphene appears at originally monolayer graphene on the buffer layer. This is a result of passivation of the SiC substrate by intercalated hydrogen as in previous reports for graphene on SiC(0001) heat treated in atomic hydrogen.

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André E. B. Amend, Tomohiro Matsui, Hiroki Hibino, Hiroshi Fukuyama. 2018-12-16. STM/S Observations of Graphene on SiC(0001) Etched by H-plasma. https://doi.org/10.7567/1347-4065/ab1b5d

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